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| ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET IXKC 13N80C VDSS = 800 V ID25 = 13 A RDS(on) = 290 m Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25C to 150C Continuous TC = 25C; Note 1 TC = 90C, Note 1 Package lead current limit ID ID = 4A, TC = 25C = 10A Maximum Ratings 800 20 13 9 45 670 0.5 6 125 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ V/ns W C C C C V~ ISOPLUS 220TM G D S Isolated back surface* G = Gate, S = Source * Patent pending D = Drain, VDS < VDSS, IF 17 A, TVJ = 150C dS/dt = 100 A/s TC = 25C Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) l Low thermal resistance due to reduced chip thickness l Low drain to tab capacitance(<30pF) l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.4 ...11 N/lb 2 g Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 250 550 2 TJ = 25C TJ = 125C 125 100 290 m m 4 25 V A A nA Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) l Power Factor Correction (PFC) l Welding l Inductive Heating l l RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125C VDS = VGS, ID = 1 mA VDS = VDSS VGS = 0 V VGS = 20 VDC, VDS = 0 Advantages l l l Easy assembly: no screws or isolation foils required Space savings High power density COOLMOS is a trademark of Infineon Technology. (c) 2001 IXYS All rights reserved 98865 (11/01) IXKC 13N80C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 83 VGS = 10 V, VDS = 640 V, ID = 17 A 9 42 25 VGS = 10 V, VDS = 640V ID = 17 A, RG = 4.7 15 75 10 1.0 0.30 nC nC nC ns ns ns ns K/W K/W ISOPLUS220 OUTLINE Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCH Reverse Conduction Symbol VSD Test Conditions IF = 6.5 A, VGS = 0 V Note 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1 1.2 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t 300 s, duty cycle d 2 % Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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